DGS17-03CS Datasheet (IXYS Corporation) - Gallium Arsenide Schottky Rectifier

DGS17-03CS, Gallium Arsenide Schottky Rectifier

Gallium Arsenide Schottky Rectifier Second generation DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Type DGS 17-03CS Marking on product 17A300AS Circuit A C Single DGSK 36-03CS DGSK 36-03CS Common cathode A C A Package TO-252 AA A A TAB TO-263 AB A A TAB A = Anode, TAB = Cathode Diode Symbol VRRM/RSM IFAV IFAV IFSM Ptot Conditions TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Maximum Ratings 300 V 29 A 17.5 A 80

DGS17-03CS Features

* GaAs Schottky Diode with Enhanced Barrier Height:

* lowest operating forward voltage drop due to additional injection of minority carriers

* high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to sh