FMM75-01F Datasheet (IXYS Corporation)

FMM75-01F, Power MOSFET

FMM 75-01F HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM ID25 = 75 A VDSS = 100 V RDSontyp.

= 18 mΩ Preliminary data 3 T1 5 4 T2 1 2 1 5 MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt EAR Conditions Maximum Ratings TVJ = 25°C to 150°C 100 V ±20 V TC = 25°C TC = 90°C 75 A 50 A (body diode) TC = 25°C (body diode) TC = 90°C 100 A 60 A VDS < VDSS; IF ≤ 300A;⎮diF/dt⎮≤ 100A/µs; RG = 2 Ω TVJ = 150°C 5 V/ns TC = 25°C 30 mJ Symbol R DSon VGSth IDSS

FMM75-01F Features

* HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode

* ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink -