IXBD4410
IXYS Corporation
705.17kb
Half bridge driver chipset. Package Temperature Range IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-S
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IXBD4411 - Half Bridge Driver Chipset
(IXYS Corporation)
IXBD4410 IXBD4411
ISOSMARTTM Half Bridge Driver Chipset
Type Description Package Temperature Range
IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI
Full.
IXBA12N300HV - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBA12N300HV IXBT12N300HV
VCES = IC110 = VCE(sat)
3000V 1.
IXBA14N300HV - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBA14N300HV IXBT14N300HV IXBH14N300HV
VCES = IC110 = VCE(sat)
3000V 14A 2.7.
IXBA16N170AHV - Bipolar MOS Transistor
(IXYS)
Advance Technical Information
High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV
Bipolar MOS Transistor
VCES = IC25 = VCE(sat.
IXBF12N300 - Monolithic Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2.
IXBF14N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF14N300
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings.
IXBF20N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBF20N300
(Electrically Isolated Tab)
Symbol Test Conditio.
IXBF20N360 - Bipolar MOS Transistor
(IXYS)
Preliminary Technical Information
High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBF20N360
VCES = IC110 = VCE(sat)
.
IXBF22N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF22N300
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings.
IXBF28N300 - Bipolar MOS Transistor
(IXYS)
Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF28N300
VCES = IC90 = VCE(sat)
3000V 28A 2.