IXBD4410 Datasheet, Chipset, IXYS Corporation

IXBD4410 Features

  • Chipset z z z z z z z z z z z z z z 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary l

PDF File Details

Part number:

IXBD4410

Manufacturer:

IXYS Corporation

File Size:

705.17kb

Download:

📄 Datasheet

Description:

Half bridge driver chipset. Package Temperature Range IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI Full-Feature Low-Side Driver 16-Pin P-DIP Full-Feature High-S

Datasheet Preview: IXBD4410 📥 Download PDF (705.17kb)
Page 2 of IXBD4410 Page 3 of IXBD4410

IXBD4410 Application

  • Applications that require half-bridge power circuits. The IXBD4410/ IXBD4411 is a full-feature chipset consisting of two 16-Pin DIP or SO devices in

TAGS

IXBD4410
Half
Bridge
Driver
Chipset
IXYS Corporation

📁 Related Datasheet

IXBD4411 - Half Bridge Driver Chipset (IXYS Corporation)
IXBD4410 IXBD4411 ISOSMARTTM Half Bridge Driver Chipset Type Description Package Temperature Range IXBD4410PI IXBD4411PI IXBD4410SI IXBD4411SI Full.

IXBA12N300HV - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat)  3000V 1.

IXBA14N300HV - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7.

IXBA16N170AHV - Bipolar MOS Transistor (IXYS)
Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat.

IXBF12N300 - Monolithic Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.

IXBF14N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.

IXBF20N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditio.

IXBF20N360 - Bipolar MOS Transistor (IXYS)
Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = IC110 = VCE(sat)  .

IXBF22N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.

IXBF28N300 - Bipolar MOS Transistor (IXYS)
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat)  3000V 28A 2.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts