IXFR100N25 Datasheet - IXYS Corporation

IXFR100N25, HiPerFET Power MOSFETs

Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High.

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IXFR100N25_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR100N25

Manufacturer:

IXYS Corporation

File Size:

81.49 KB

Description:

HiPerFET Power MOSFETs

Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

Applications

* l DC-DC converters l l l l Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Advantages l Easy assembly l l

IXFR100N25 Distributors

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IXFR100N25 HiPerFET Power MOSFETs IXYS Corporation

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