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IXFR100N25 Datasheet - IXYS Corporation

IXFR100N25 HiPerFET Power MOSFETs

Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25 RDS(on) = 250 V = 87 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = External lead current limit = 25°C, N.

IXFR100N25 Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFR100N25_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR100N25

Manufacturer:

IXYS Corporation

File Size:

81.49 KB

Description:

Hiperfet power mosfets.

IXFR100N25 Distributor

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IXFR100N25 IXFR100N25 HiPerFET Power MOSFETs IXYS Corporation