Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFR 100N25 VDSS ID25 RDS(on) = 250 V = 87 A = 27 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = External lead current limit = 25°C, N
IXFR100N25_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFR100N25
Manufacturer:
IXYS Corporation
File Size:
81.49 KB
Description:
Hiperfet power mosfets.