* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFR100N25 Datasheet (81.49 KB)
IXFR100N25
IXYS Corporation
81.49 KB
Hiperfet power mosfets.
Advance Technical Information
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High.
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