IXFR100N25
Features l Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<30p F) l l l
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2.0 V 4 V ±200 n A TJ = 25°C TJ = 125°C 100 µA 2 m A 27 mΩ Applications l DC-DC converters l l l l
Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3
Advantages l Easy assembly l l
Space savings High power density
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98840 (5/01)
IXFR 100N25
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max....
