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IXFR10N100F Datasheet - IXYS Corporation

IXFR10N100F HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ .

IXFR10N100F Features

* z RF capable MOSFETs z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC

IXFR10N100F_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR10N100F

Manufacturer:

IXYS Corporation

File Size:

91.92 KB

Description:

Hiperfet power mosfets.

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