* ISOPLUS 247TM VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight G D Isolated back surface
* D = Drain G = Gate S = Source
* Patent pending
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrica
IXFR10N100Q Datasheet (33.67 KB)
IXFR10N100Q
IXYS Corporation
33.67 KB
N-channel power mosfet.
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS
VDSS
ID25
RDS(on) 1.05 W 1.20 W
1000 V 10 A IXFR 10N100.
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