IXFR10N100Q N-Channel Power MOSFET

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100.

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Datasheet Specifications

Part number: IXFR10N100Q
Manufacturer: IXYS Corporation
File Size: 33.67 KB
Datasheet: IXFR10N100Q_IXYSCorporation.pdf
Description: N-Channel Power MOSFET

Features

* ISOPLUS 247TM VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight G D Isolated back surface
* D = Drain G = Gate S = Source
* Patent pending
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrica

Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.5 ±100 TJ = 25°C TJ = 125°C 12N100 10N100 50 1 1.05 1.2 V V nA mA mA W W Advantages
* Easy assembly
* Space savings
* High power density
* DC-DC converters

IXFR10N100Q Distributors

📁 Related Datasheet

IXFR102N30P IXFR120N25P IXFR140N20P IXFR14N100Q2 IXFR14N80 IXFR150N15

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IXFR10N100Q N-Channel Power MOSFET IXYS Corporation

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