IXFR12N100F
Features z RF capable MOSFETs z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance
- easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies, >500k Hz switching z DC choppers z 13.5 MHz industrial applications z Pulse generation z Laser drivers z RF amplifiers Advantages z ISOPLUS 247TM package for clip or spring mounting z Space savings z High power density
98934(7/02)
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±100 n A TJ = 25°C TJ = 125°C 12N100 10N100 50 µA 1.5 m A 1.05 1.2 Ω Ω
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1m A VDS = VGS, ID = 4m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2
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IXFR 10N100F IXFR 12N100F
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 8 12...
