IXFR12N100Q Datasheet - IXYS Corporation

IXFR12N100Q N-Channel Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VD.

IXFR12N100Q Features

* ISOPLUS 247TM VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight G D Isolated back surface

* D = Drain G = Gate S = Source

* Patent pending

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrica

IXFR12N100Q_IXYSCorporation.pdf

IXFR12N100Q Datasheet Preview — Preview of IXFR12N100Q PDF

Datasheet Details

Part number:

IXFR12N100Q

Manufacturer:

IXYS Corporation

File Size:

33.67 KB

Description:

N-channel power mosfet.

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IXFR12N100Q IXFR12N100Q N-Channel Power MOSFET IXYS Corporation

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