Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VD
IXFR12N100Q_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFR12N100Q
Manufacturer:
IXYS Corporation
File Size:
33.67 KB
Description:
N-channel power mosfet.