IXFR12N100Q
Features
ISOPLUS 247TM
VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight
Isolated back surface- D = Drain
G = Gate S = Source
- Patent pending
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<50p F)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.5 ±100 TJ = 25°C TJ = 125°C 12N100 10N100 50 1 1.05 1.2 V V n A m A m A W W Advantages
- Easy assembly
- Space savings
- High power density
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3m A VDS = VGS, ID = 4m A VGS = ±20 VDC, VDS = 0 VDS = 0.8
- VDSS VGS = 0 V VGS = 10...
