L102 Datasheet (IXYS Corporation) - High Power Diode Modules

L102, High Power Diode Modules

MDD 312 High Power Diode Modules VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type 3 1 2 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V 3 2 MDD MDD MDD MDD MDD MDD 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Maximum Ratings 520 310 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 9200 9800 551000 527000 423

L102 Features

* International standard package

* Direct copper bonded Al2O3-ceramic with copper base plate

* Planar passivated chips

* Isolation voltage 3600 V~

* UL registered E 72873 Applications

* Supplies for DC power equipment

* DC supply for PWM invert