L182 Datasheet (IXYS Corporation) - HiPerFRED Epitaxial Diode with soft recovery

L182, HiPerFRED Epitaxial Diode with soft recovery

DSEP 8-06A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 35 ns A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 8-06A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5 VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 50 0.1 0.1 -55+175 175 -55+1

L182 Features

* A q mJ A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 60 0.40.6 2 Applications q q q Symbol IR x Condit