L356 Datasheet (IXYS Corporation) - HiPerDynFRED Epitaxial Diode with soft recovery

L356, HiPerDynFRED Epitaxial Diode with soft recovery

DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 VRRM V 600 Type A C ISOPLUS 247TM C A Isolated back surface DSEP 9-06CR A = Anode, C = Cathode Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep.

rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non

L356 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low cathode to tab capacitance (< 25 pF)

* International standard package

* Planar passivated chips

* Very short recovery time