TA36N30P Datasheet - IXYS Corporation

TA36N30P IXTA36N30P

Advanced Technical Information www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS(on) = = = 300 V 36 A 110 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S (TAB) D = Drain TAB = Drain G D S (TAB) G D S (TAB) TC = 25°C TC = 25.

TA36N30P Features

* 1.13/10 Nm/lb.in. 5.5 4 3 g g g z z Md Weight z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS

TA36N30P Datasheet (614.54 KB)