VMM90-09F Datasheet - IXYS Corporation

VMM90-09F Dual Power HiPerFET Module

VMM 90-09F Dual Power HiPerFETTM Module Phaseleg Configuration VDSS = 900 V ID25 = 85 A RDS(on) = 76 mΩ MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C 3 8 9 1 11 10 2 6 7 NTC Maximum Ratings 900 V ±20 V 85 A 65 A 85 A 65 A Symbol RDSon VGSth I DSS IGSS Qg Qgs Qgd t d(on) tr td(off) tf VF trr RthJC RthJS Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) m.

VMM90-09F Features

* HiPerFET TM technology

* low RDSon

* unclamped inductive switching (UIS) capability

* dv/dt ruggedness

* fast intrinsic reverse diode

* low gate charge

* thermistor for internal temperature measurement

* package

* low inductiv

VMM90-09F_IXYSCorporation.pdf

VMM90-09F Datasheet Preview — Preview of VMM90-09F PDF

Datasheet Details

Part number:

VMM90-09F

Manufacturer:

IXYS Corporation

File Size:

130.88 KB

Description:

Dual power hiperfet module.

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VMM90-09F VMM90-09F Dual Power HiPerFET Module IXYS Corporation

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