* MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
* package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless oth
VWM350-0075P Datasheet (73.85 KB)
VWM350-0075P
IXYS Corporation
73.85 KB
Three phase full bridge.
VWM 350-0075P Three phase full bridge with Trench MOSFETs Preliminary data L+ VDSS = 75 V RDSon = 2.3 mΩ ID25 = 340 A T1 G1 S1 G3 S3 T2 G5 S5 T3 .
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