VWM350-0075P - Three phase full bridge

IXYS Corporation

Datasheet Details

MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2 0.25 0.2 450 60 170 60 170 320 200 1.1 90 0.51 1.6 3.3 m Ω 4 0.02 V mA mA µA nC nC nC ns ns ns ns V ns 0.26 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr t.

📁 VWM350-0075P Similar Datasheet

Other Datasheets by IXYS Corporation

Published: Apr 17, 2005 |