30N50 Description
+150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
30N50 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Diode