30N50
Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Diode
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 30N50 | Inchange Semiconductor | N-Channel MOSFET |