30N50 Datasheet - IXYS

30N50 N-Channel MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFT 30N50 IXFH/IXFT 32N50 V DSS 500 V 500 V I D25 30 A 32 A R DS(on) 0.16 W 0.15 W trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS V GSM Continuous Transient ±30 ID25 TC = 25°C IDM TC = 25°C pulse width limited by TJM IAR TC = 25°C 30N50 32N50 30N50 32N50 30N50 32N50 EAS EAR dv/dt TC = 25°C ID = 25°C I S £ I, DM di/dt £ 100 A/ms.

30N50 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance - easy to drive and to protect

* Fast intrinsic Diode Applications

30N50 Datasheet (109.17 KB)