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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 30N50 IXFH/IXFT 32N50
V DSS
500 V 500 V
I
D25
30 A 32 A
R DS(on)
0.16 W 0.15 W
trr £ 250 ns
Symbol
Test Conditions
VDSS VDGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
VGS V
GSM
Continuous Transient
±30
ID25 TC = 25°C
IDM TC = 25°C pulse width limited by TJM
IAR TC = 25°C
30N50 32N50 30N50 32N50 30N50 32N50
EAS EAR dv/dt
TC = 25°C
ID = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V DD
£
V, DSS
TJ £ 150°C, RG = 2 W
PD TC = 25°C
TJ TJM Tstg
TL 1.6 mm (0.062 in.) from case for 10 s
M Mounting torque d
Weight
Maximum Ratings
500 V 500 V
±20 V V
30 A 32 A 120 A 128 A 30 A 32 A
1.5 J
45 mJ
5 V/ns
360 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C
1.13/10 Nm/lb.
30N50 Datasheet
