90N15 Datasheet (IXYS) - N-Channel MOSFET

90N15, N-Channel MOSFET

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 90N15 V DSS ID25 R DS(on) = = = 150 V 90 A 16 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 I D(RMS) IDM I AR E AR EAS dv/dt PD T J TJM Tstg TL M d Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤

90N15 Features

* Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure

* Internationalstandardpackage

* Fastswitchingtimes