CPC3960ZTR
IXYS
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N-channel mosfet. The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s pro
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CPC3960 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
600V
RDS(on) (max)
44
IDSS (min) 100mA
Package SOT-223
Features
• High Breakdown Voltage: 600V • On-Re.
CPC3902 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
250V
RDS(on) (max)
2.5
IDSS (min) 400mA
Package SOT-223
Features
• High Breakdown Voltage: 250V • On-R.
CPC3902Z - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
250V
RDS(on) (max)
2.5
IDSS (min) 400mA
Package SOT-223
Features
• High Breakdown Voltage: 250V • On-R.
CPC3902ZTR - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
250V
RDS(on) (max)
2.5
IDSS (min) 400mA
Package SOT-223
Features
• High Breakdown Voltage: 250V • On-R.
CPC3909 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power
SOT-89 Package
SOT-223 Package
Ratin.
CPC3909CTR - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power
SOT-89 Package
SOT-223 Package
Ratin.
CPC3909ZTR - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power
SOT-89 Package
SOT-223 Package
Ratin.
CPC390J - Disc Ceramic Capacitors
(Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CPC3980 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
800V
RDS(on) (max)
45
IDSS (min) 100mA
Package SOT-223
Features
• High Breakdown Voltage: 800V • Low O.
CPC3980Z - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
800V
RDS(on) (max)
45
IDSS (min) 100mA
Package SOT-223
Features
• High Breakdown Voltage: 800V • Low O.