CPC3980Z
IXYS
116.66kb
N-channel mosfet. The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s pr
TAGS
📁 Related Datasheet
CPC3980 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
800V
RDS(on) (max)
45
IDSS (min) 100mA
Package SOT-223
Features
• High Breakdown Voltage: 800V • Low O.
CPC3980ZTR - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
800V
RDS(on) (max)
45
IDSS (min) 100mA
Package SOT-223
Features
• High Breakdown Voltage: 800V • Low O.
CPC3981Z - N-Channel MOSFET
(Littelfuse)
CPC3981Z
800V, 45Ω N-Channel MOSFET
Key Attributes
Characteristic V(BR)DSX TJ RDS(on) IDSS
Rating 800 150 45 100
Unit V °C Ω mA
Pinout Diagram (SO.
CPC3982 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
800V
RDS(on) (max)
380
IDSS (min) 20mA
Package SOT-23
Features
• High Breakdown Voltage: 800V •.
CPC3982T - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
800V
RDS(on) (max)
380
IDSS (min) 20mA
Package SOT-23
Features
• High Breakdown Voltage: 800V •.
CPC3982TTR - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
V(BR)DSX / V(BR)DGX
800V
RDS(on) (max)
380
IDSS (min) 20mA
Package SOT-23
Features
• High Breakdown Voltage: 800V •.
CPC3902 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
250V
RDS(on) (max)
2.5
IDSS (min) 400mA
Package SOT-223
Features
• High Breakdown Voltage: 250V • On-R.
CPC3902Z - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
250V
RDS(on) (max)
2.5
IDSS (min) 400mA
Package SOT-223
Features
• High Breakdown Voltage: 250V • On-R.
CPC3902ZTR - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
BVDSX/ BVDGX
250V
RDS(on) (max)
2.5
IDSS (min) 400mA
Package SOT-223
Features
• High Breakdown Voltage: 250V • On-R.
CPC3909 - N-Channel MOSFET
(IXYS)
INTEGRATED CIRCUITS DIVISION
Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power
SOT-89 Package
SOT-223 Package
Ratin.