* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance(15pF typical) International standard package Epoxy meets UL 94V-0 ISOPLUS220 Outline (2 leads) -55+150 150 -55+150 °C °C °C 260 °C 50/60 H
DSI30-12AC Datasheet (80.54 KB)
DSI30-12AC
IXYS
80.54 KB
Rectifier diode.
DSI 30
Rectifier Diode ISOPLUS220TM
Electrically Isolated Back Surface
VRRM = 800 - 1200 V IF(AV)M = 30 A
VRSM V
900 1300
VRRM V
800 1200
Type
DS.
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