FMD21-05QC - Power MOSFET
Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM Preliminary data FMD 3 4 1 2 FMD 21-05QC FDM 21-05QC ID25 = 21 A VDSS = 500 V RDSon typ.
= 190 mΩ FDM 3 5 4 2 1 5 MOSFET Symbol VDSS VGS ID25 ID90 Symbol RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf R thJC RthJH Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C Maximum Ratings 500 V ±20 V 21 A 15 A Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = I
FMD21-05QC Features
* Q-Class Power MOSFET technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness
* HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation
