G1000QC450 Datasheet, thyristor equivalent, IXYS

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G1000QC400 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 31 Jan, 2008 Data Sheet Issue:- 1 Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G1000QC400 to G1000QC.

G1000QC250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 2 Aug, 2011 Data Sheet Issue:- A1 Provisional Data Anode Shorted Gate Turn-Off Thyristor Types G1000QC250 Absolute .

G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250 Absolute Maximum Ratings VDRM VRSM VRRM VDC-link VO.

G1000LM250 - Anode-Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250 Absolute Maximum Ratings VDRM VRSM VRRM VDC-link VO.

G1000NC450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 28 Oct-04 Data Sheet Issue:- 1 Anode Shorted Gate Turn-Off Thyristor Type G1000NC450 Absolute Maximum Ratings VDRM.

G1000NL450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
WESTCODE An IXYS Company Date:- 16 Jun-04 Data Sheet Issue:- 1 Anode Shorted Gate Turn-Off Thyristor Type G1000NL450 Absolute Maximum Ratings VDRM.

G1002 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G1002 N-Channel Enhancement Mode Power MOSFET Description The G1002 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. .

G1003A - N-Channel Enhancement Mode Power MOSFET (GFD)
G1003A N-Channel Enhancement Mode Power MOSFET Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G1003B - N-Channel MOSFET (GOFORD)
GOFORD G1003B General Description The G1003B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate v.

G1005 - MOSFET (GOFORD)
GOFORD General Description The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages a.