IX150T06M-AG - XPT IGBT

IXYS

Datasheet Details

/ Advantages:.
Easy paralleling due to the positive temperature coefficient of the on-state voltage.
Rugged Trench XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 2x Ic - low EMI - Tvjm = 175°C.
Thin wafer technology combined with the XPT design results in a competitive low Vce(sat).
Solderable/sinterable frontside metallization for highly reliable interconnection technology Mechanical Parameters.

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Published: Oct 1, 2023 |