IXDN630, IXDD630CI Datasheet - IXYS

IXDN630 - Ultrafast MOSFET Drivers

The IXDD630/IXDI630/IXDN630 high-speed gate drivers are especially well suited for driving the latest IXYS power MOSFETs and IGBTs. The IXD_630 output can source and sink 30A of peak current while producing voltage rise and fall times of less than 20ns. Internal circuitry eliminates cross conduction.

IXDN630 Features

* 30A Peak Source/Sink Drive Current

* High Operating Voltage Capability: 35V

* -40°C to +125°C Extended Operating Temperature Range

* Under-Voltage Lockout Protection

* Logic Input Withstands Negative Swing of up to 5V

* Fast Rise and Fall Times: < 20

IXDD630CI-IXYS.pdf