IXLF19N250A Datasheet - IXYS

IXLF19N250A High Voltage IGBT

High Voltage IGBT in High Voltage ISOPLUS i4-PACTM IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres QGon RthJC 1 1 2 5 2 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 2500 V ± 20 V 32 A 19 A 70 1200 A V 250 W Conditions Characteris.

IXLF19N250A Features

* High Voltage IGBT - substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays

* ISOPLUS

IXLF19N250A-IXYS.pdf