* SPT+ IGBT technology
* low saturation voltage
* low switching losses
* switching frequency up to 30 kHz
* square RBSOA, no latch up
* high short circuit capability
* positive temperature coefficient for easy parallelling
* MOS in
MIEB100W1200DPFTEH Datasheet (350.05 KB)
MIEB100W1200DPFTEH
IXYS
350.05 KB
Spt+igbt.
Six-Pack SPT+ IGBT
Preliminary data
Part name (Marking on product) MIEB100W1200DPFTEH
MIEB 100W1200DPFTEH
VCES = 1200 V IC25 = 170 A VCE(sat) typ..
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