MII200-12A4 Datasheet - IXYS

MII200-12A4 IGBT Module

IGBT Modules Short Circuit SOA Capability Square RBSOA MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V V = 2.2 V CE(sat) typ. MII 3 MID 3 MDI 3 8 91 8 19 1 11 11 10 2 10 2 2 3 2 1 11 10 9 8 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Md Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 6.8 W, non repetitive VGE=.

MII200-12A4 Features

* q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package wi

MII200-12A4 Datasheet (113.49 KB)