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MKE38P600LB Power MOSFET

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Description

CoolMOS™ 1) Power MOSFET ISOPLUS™ - electrically isolated surface to heatsink Surface Mount Power Device MKE 38P600LB ID25 = 50 A VDSS = 600 V R.

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Datasheet Specifications

Part number
MKE38P600LB
Manufacturer
IXYS
File Size
384.96 KB
Datasheet
MKE38P600LB-IXYS.pdf
Description
Power MOSFET

Features

* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness
* Package - isolated surface to heatsink - low coupling capacity betwee

Applications

* Switch mode power supplies (SMPS)
* Soft switching topologie
* Resonant converter 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20130506b 1-5 Source-Drain Diodes of T1/T2 Symbol Conditions Maximum Ratings IS25 TC = 25°C IS80 TC = 80°C 50 A 38 A Symbol C

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