MKE38P600LB Datasheet (IXYS)

MKE38P600LB, Power MOSFET

CoolMOS™ 1) Power MOSFET ISOPLUS™ - electrically isolated surface to heatsink Surface Mount Power Device MKE 38P600LB ID25 = 50 A VDSS = 600 V R = DS(on) max 45 mW DC+ T1 G1 KS1 L T2 G2 KS2 DC- MOSFETs T1, T2 Symbol Conditions VDSS VGS ID25 ID80 EAS EAR dV/dt TVJ = 25°C to 150°C TC = 25°C TC = 80°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0480 V Maximum Ratings 600 V ±20 V 50 A 38 A 1950 mJ 3 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Co

MKE38P600LB Features

* Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness

* Package - isolated surface to heatsink - low coupling capacity betwee