T0160NB45A Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T0160NB45A, Insulated Gate Bi-Polar Transistor

Date:- 6 Nov, 2015 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Rep