T0285NC33E Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T0285NC33E, Insulated Gate Bi-Polar Transistor

Date:- 5 Sep, 2019 Data Sheet Issue:- P1 Tentative Data Insulated Gate Bi-Polar Transistor Type T0285NC33E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs,