T0425VC33G Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T0425VC33G, Insulated Gate Bi-Polar Transistor

Insulated Gate Bi-polar Transistor Type T0425VC33G Date:- 20 Feb, 2019 Data Sheet Issue:- A1 Advance data Insulated Gate Bi-Polar Transistor Type T0425VC33G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX PD (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak col