T0600AF65G Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T0600AF65G, Insulated Gate Bi-Polar Transistor

Date:- 27 Feb, 2015 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0600AF65G Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Collector emitter voltage (Tj 25°C) Collector emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr