T0800EB45G Datasheet (IXYS) - Insulated Gate Bi-Polar Transistor

T0800EB45G, Insulated Gate Bi-Polar Transistor

WESTCODE An IXYS Company Date:- 3 March, 2012 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate.

Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous