* / Advantages:
* Planar passivated chips
* Very low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
VBE100-12NO7 Datasheet (233.14 KB)
VBE100-12NO7
IXYS
233.14 KB
High performance fast recovery diode.
HiPerFRED Module High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE100-12NO7 EG 1 ~~ K10 L9 PS 18 .
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