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L356 HiPerDynFRED Epitaxial Diode with soft recovery

L356 Description

DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 .

L356 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low cathode to tab capacitance (< 25 pF)
* International standard package
* Planar passivated chips
* Very short recovery time

L356 Applications

* Antiparallel diode for high frequency switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters and motor control circuits
* Rectifiers in switch mode power supplies (SMPS)
* Inductive heating
* Uninterrupti

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Datasheet Details

Part number
L356
Manufacturer
IXYS Corporation
File Size
44.77 KB
Datasheet
L356_IXYSCorporation.pdf
Description
HiPerDynFRED Epitaxial Diode with soft recovery

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HiPerDynFRED Epitaxial Diode with soft recovery IXYS Corporation
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