Download 2N3172 Datasheet PDF
Inchange Semiconductor
2N3172
2N3172 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Excellent Safe Operating Area - Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -10 Collector Current-Continuous -3 Collector Power Dissipation@TC=25℃ TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67...