2N5551 - Silicon NPN Power Transistor

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Inchange Semiconductor

Datasheet Details

Part number	2N5551
Manufacturer	Inchange Semiconductor
File Size	122.07 KB
Description	Silicon NPN Power Transistor
Datasheet	2N5551 Datasheet
Additional preview pages of the 2N5551 datasheet.

Product details

Description

NPN high-voltage transistor Low current (max. High voltage (max. Complements to 2N5401. Designed for Switching and amplification in high voltage applications , such as telephony applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 0.3 A ICM

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Other Datasheets by Inchange Semiconductor

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Published: Jun 22, 2016 |