2N5551
DESCRIPTION
- NPN high-voltage transistor
- Low current (max. 300 m A)
- High voltage (max. 160 V)
- plements to 2N5401. isc Product Specification
APPLICATIONS
- Designed for Switching and amplification in high voltage applications , such as telephony applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
0.3 A
ICM Collector Current-Peak
0.6 A
IBM Base Current-Peak
Collector Power Dissipation @ Ta<50℃
0.1 A 0.63 W
J Junction Temperature Tstg Storage Temperature Range
150 ℃ -65~150 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10m A; IB= 1m A
VCE(sat)-2...
