Datasheet4U Logo Datasheet4U.com

2SA649 PNP Transistor

2SA649 Description

isc Silicon PNP Power Transistor 2SA649 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

2SA649 Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-P

📥 Download Datasheet

Preview of 2SA649 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA640 - PNP Silicon Epitaxial Transistor (ETC)
  • 2SA641 - (2SAxxxx) TRANSISTOR (Micro Electronics)
  • 2SA642 - Transistors (ETC)
  • 2SA643 - Transistors (ETC)
  • 2SA648 - Silicon POwer Transistors (SavantIC)
  • 2SA603 - PNP SILICON EPITAXIAL TRANSISTOR (ETC)
  • 2SA606 - PNP/NPN Transistor (ETC)
  • 2SA607 - PNP/NPN Transistor (ETC)

📌 All Tags

PNP Transistor Inchange Semiconductor
Inchange Semiconductor 2SA649-like datasheet