2SA649 Datasheet - Inchange Semiconductor

PNP Transistor

2SA649 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.

2SA649 Datasheet (189.76 KB)

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2SA649

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Inchange Semiconductor

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189.76 KB

Description:

Pnp transistor.

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2SA649 PNP Transistor Inchange Semiconductor

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2SA649 General Description

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