2SA649 PNP Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA649 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number: 2SA649
Manufacturer: Inchange Semiconductor
File Size: 189.76 KB
Datasheet: 2SA649_InchangeSemiconductor.pdf
Description: PNP Transistor

Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-P

2SA649 Distributors

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2SA649 PNP Transistor Inchange Semiconductor

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