2SA649 Datasheet - Inchange Semiconductor

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2SA649 PNP Transistor

isc Silicon PNP Power Transistor 2SA649 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Details

Part number:

2SA649

Manufacturer:

Inchange Semiconductor

File Size:

189.76 KB

Description:

PNP Transistor

Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-P

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2SA649 PNP Transistor Inchange Semiconductor

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