2SA663 Datasheet, Transistor, Inchange Semiconductor

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2SA663

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.)

Collector-Emitter Saturation Voltage- : VCE(sat)= -2.3V

2SA663 Application

• Applications
• Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

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2SA663

Inchange Semiconductor

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