2SA663 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA663 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= -2. Comp.

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Datasheet Specifications

Part number: 2SA663
Manufacturer: Inchange Semiconductor
File Size: 198.41 KB
Datasheet: 2SA663_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous

2SA663 Distributors

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2SA663 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA663-like datasheet