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2SA663 POWER TRANSISTOR

2SA663 Description

isc Silicon PNP Power Transistor 2SA663 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= -2. Comp.

2SA663 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IE Emitter Current-Continuous

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Datasheet Details

Part number
2SA663
Manufacturer
Inchange Semiconductor
File Size
198.41 KB
Datasheet
2SA663_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

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POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA663-like datasheet