2SC3198 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

High DC Current Gain-hFE=70-700@IC = 2mA Excellent hFE Linearity Excellent Safe Operating Area Low Noise Complement to Type 2SA1266 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Low Frequency Amplifiers.

Low No

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2SC3198 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC3198
Manufacturer	Inchange Semiconductor
File Size	207.27 KB
Description	Silicon NPN Power Transistor
Datasheet	2SC3198 Datasheet

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isc Silicon NPN Transistor DESCRIPTION ·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·Complement to Type 2SA1266 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low Frequency Amplifiers. ·Low Noise Amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC3198 VALUE UNIT 60 V 50 V 5V 150 mA 400 mW 125 ℃ -55~125 ℃ isc website：www.iscsemi.