Datasheet Details
| Part number | 2SC3198 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.27 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SC3198 Datasheet
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| Part number | 2SC3198 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.27 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SC3198 Datasheet
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·High DC Current Gain-hFE=70-700@IC = 2mA ·Excellent hFE Linearity ·Excellent Safe Operating Area ·Low Noise ·Complement to Type 2SA1266 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low Frequency Amplifiers.
·Low Noise Amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range INCHANGE Semiconductor 2SC3198 VALUE UNIT 60 V 50 V 5V 150 mA 400 mW 125 ℃ -55~125 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC3198 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ;
isc Silicon NPN Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3198 | Transistors | Korea Electronics |
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2SC3198 | NPN Silicon Transistor | SEMTECH |
| Part Number | Description |
|---|---|
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| 2SC3127 | Silicon NPN RF Transistor |
| 2SC3130 | Silicon NPN RF Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
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