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2SD5011 Power Transistor

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Description

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SD5011 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number
2SD5011
Manufacturer
Inchange Semiconductor
File Size
189.67 KB
Datasheet
2SD5011_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V IC Collector Current-Continuous 3.5

2SD5011 Distributors

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Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD5011-like datasheet