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2SD5070 - Power Transistor

2SD5070 Description

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5070 .
High Breakdown Voltage: VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLICATIONS. Designed.

2SD5070 Applications

* Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT 1500 V 800 V 6 V 2.5 A 10 A 50 W n c . i m e IC Collector Current- C

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Power Transistor Inchange Semiconductor
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