High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
Built-in Damper Diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in horizontal deflection circuits of
colour TV recei
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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5071
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Reliability
·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
colour TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
800
V
6
V
IC
Collector Current-Continuous
3.5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
10
A
50
W
150
℃
-55~150 ℃
isc website：www.iscsemi.
2SD5071 Datasheet
