Download 2SD5072 Datasheet PDF
Inchange Semiconductor
2SD5072
2SD5072 is Silicon NPN Power Transistors manufactured by Inchange Semiconductor.
DESCRIPTION - High Breakdown Voltage- : VCBO= 1500V (Min) - High Switching Speed - High Reliability - Built-in Damper Diode - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Tstg Storage Temperature ℃ -55~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise...