Part number:
2SK1171
Manufacturer:
Inchange Semiconductor
File Size:
202.83 KB
Description:
N-channel mosfet transistor.
2SK1171
Inchange Semiconductor
202.83 KB
N-channel mosfet transistor.
📁 Related Datasheet
2SK117 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
2SK117
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• • • • High |Yfs|: |Yfs| = 15 m.
2SK117 - Silicon N-Channel MOSFET
(Apm)
Apm JFET
2SK117
Low Noise Amplifier Applications Silicon N Channel Junction Type
*High Yfs=15ms(typ)(VDS=10V,VGS=0) *High VGDS=--30V *Low noise:NF=1.
2SK1170 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1169, 2SK1170
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low driv.
2SK1170 - Silicon N-Channel MOSFET
(Renesas)
2SK1169, 2SK1170
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive curr.
2SK1172 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations fo.
2SK1177 - MOSFET
(Sanken electric)
2SK1177
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 2.5 ± 10 (Tch 150ºC)
(Ta = 25ºC)
External dimens.
2SK1178 - MOSFET
(Sanken electric)
2SK1178
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 4.0 ± 16 (Tch 150ºC)
(Ta = 25ºC)
External dimens.
2SK1179 - MOSFET
(Sanken electric)
2SK1179
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 8.5 ± 34 (Tch 150ºC)
(Ta = 25ºC)
External dimensio.
