2SK1612 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor .
Drain Current. ID=3A@ TC=25℃. Drain Source Voltage- : VDSS=900V(Min). Minimum Lot-to-Lot variations for robust device performance.

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Datasheet Specifications

Part number: 2SK1612
Manufacturer: Inchange Semiconductor
File Size: 207.78 KB
Datasheet: 2SK1612-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Applications

* Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current

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2SK1612 N-Channel MOSFET Transistor Inchange Semiconductor

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