2SK960-MR - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	2SK960-MR
Manufacturer	Inchange Semiconductor
File Size	279.20 KB
Description	N-Channel MOSFET Transistor
Datasheet	2SK960-MR-InchangeSemiconductor.pdf

2SK960-MR Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 40 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junct

Features

Drain Current : ID= 3.0A@ TC=25℃.
Drain Source Voltage : VDSS= 900V(Min).
Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jul 30, 2022 |