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2SK960-MR

N-Channel MOSFET Transistor

2SK960-MR Features

* Drain Current : ID= 3.0A@ TC=25℃

* Drain Source Voltage : VDSS= 900V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive,

2SK960-MR General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3.0 A IDM Drain Current-Single Pluse 12 A PD To.

2SK960-MR Datasheet (279.20 KB)

Preview of 2SK960-MR PDF

Datasheet Details

Part number:

2SK960-MR

Manufacturer:

Inchange Semiconductor

File Size:

279.20 KB

Description:

N-channel mosfet transistor.

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2SK960-MR N-Channel MOSFET Transistor Inchange Semiconductor

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