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3DD325

Silicon NPN Power Transistor

3DD325 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min)
*Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 0.5A APPLICATIONS
*Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collecto.

3DD325 Datasheet (189.20 KB)

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Datasheet Details

Part number:

3DD325

Manufacturer:

Inchange Semiconductor

File Size:

189.20 KB

Description:

Silicon npn power transistor.

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3DD325 Silicon NPN Power Transistor Inchange Semiconductor

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