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3N80 N-Channel MOSFET Transistor

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
3N80
Manufacturer
Inchange Semiconductor
File Size
227.72 KB
Datasheet
3N80-InchangeSemiconductor.pdf
Description
N-Channel MOSFET Transistor

Features

* Drain Current ID=3.0A@ TC=25℃
* Drain Source Voltage- : VDSS= 800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching power supplies,converters,AC and DC motor controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 3 A IDM Drain Current-Single Plused 12 A PD

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