B1217 2SB1217

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 .
High Collector Current -IC= -3A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. Low Saturation Vo.

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Datasheet Specifications

Part number: B1217
Manufacturer: Inchange Semiconductor
File Size: 100.97 KB
Datasheet: B1217-InchangeSemiconductor.pdf
Description: 2SB1217

Applications

* Designed for use in DC-DC converter, driver, solenid and motor . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector

B1217 Distributors

📁 Related Datasheet

B1212D-1W B1212D-2W B1212D-W5 B1212LD-1W B1212LM-1W B1212LS-1W

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B1217 2SB1217 Inchange Semiconductor

Inchange Semiconductor B1217-like datasheet