BDX88 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor BDX88/A/B/C .
High DC Current Gain- : hFE= 750(Min)@ IC= -6A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(.

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Datasheet Specifications

Part number: BDX88
Manufacturer: Inchange Semiconductor
File Size: 213.30 KB
Datasheet: BDX88-INCHANGE.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX88 -45 BDX88A -60 VCBO Collector-Base Voltage BDX88B -80 BDX88C -100 BDX88 -45 VCEO Collector-Emitter Voltage BDX88A -60 BDX88B -80 BDX88C -100 VEBO Em

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BDX88 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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